4AK26 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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4AK26

Silicon N-Channel Power MOS FET Array

Hitachi -> Renesas Electronics 

4AK26

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 Devices operation

Symbol

Ratings

VDSS

60

VGSS

±20

ID

10

I *1

D(pulse)

32

I DR

10

Pch (Tc = 25°C)*2 28

Pch*2

4

Tch

150

Tstg

–55 to +150

Unit

V

V

A

A

A

W

W

°C

°C

2

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