4AK26 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

4AK26

Silicon N-Channel Power MOS FET Array

Hitachi -> Renesas Electronics 

4AK26

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

60

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

1.0

Static drain to source on state RDS(on)

—

resistance

—

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

2.0 V

0.045 0.06 Ω

0.056 0.075 Ω

Forward transfer admittance |yfs|

10

12

—

S

Input capacitance

Ciss

—

1400 —

pF

Output capacitance

Coss —

720 —

pF

Reverse transfer capacitance Crss

—

220 —

pF

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

15

—

ns

—

95

—

ns

—

300 —

ns

—

170 —

ns

—

1.05 —

V

Body to drain diode reverse trr

recovery time

—

110 —

µs

Note: 1. Pulse Test

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 5 A

VGS = 10 V*1

ID = 5 A

VGS = 4 V*1

ID = 5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 10 A

VGS = 10 V

RL = 3 Ω

IF = 10 A, VGS = 0

IF = 10 A, VGS = 0,

dIF/dt = 50 A/µs

3

Share Link: