PF08103B データシートの表示（PDF） - Hitachi -> Renesas Electronics

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PF08103B

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Hitachi -> Renesas Electronics 

PF08103B

Internal Circuit Block Diagram

Vdd1

Vdd2

Pout GSM

Pin

Pout DCS

Bias circuit

VCTL VCTL

Vapc

Band Select and Power Control

Operating Mode

VCTL

VCTL

GSM Tx ON

H

L

DCS Tx ON

L

H

Tx OFF

L

L

Vapc

Control

Control

< 0.2 V

Current of Control Pin

Control Pin

VCTL

Equivalent Input Circuit

Control Current

2 µA Max

VCTL

Vapc

Note: Control current is preliminary value.

1 µA Max

3 mA Max at 2.2 V

2

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