PF08103B データシートの表示（PDF） - Hitachi -> Renesas Electronics
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PF08103B
Hitachi -> Renesas Electronics
PF08103B Datasheet PDF : 7 Pages
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PF08103B
Electrical Characteristics for GSM900 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, VDD1 = V DD2 = 3.5V, Pin = +1dBm, VCTL = 2.0V, VCTL = 0.1V, Rg = Rl = 50Ω,
Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Symbol
Min Typ Max
Frequency range
f
880
915
Control voltage range
Vapc
0.2
2.2
Total efficiency
ηT
40
45
2nd harmonic distortion
2nd H.D.
−45
−35
3rd harmonic distortion
3rd H.D.
−45
−35
4th~8th harmonic distortion 4th~8th H.D.
−35
Input VSWR
VSWR (in)
1.5
3.5
Output power (1)
Pout (1)
35.0 36.0
Output power (2)
Pout (2)
33.5 34.2
Isolation
Isolation at
DCS RF-output
when GSM is active
Switching time
tr, tf
Stability
−45
−37
−30
−20
1
2
No parasitic oscillation
Load VSWR tolerance
No degradation
Noise power
Slope Pout/Vapc
Phase shift
Total conversion gain1
Pnoise1
Pnoise2
−80
−84
200
20
−5
Total conversion gain2
−5
AM output
20
Unit
MHz
V
%
dBc
dBc
dBc
dBm
dBm
dBm
dBm
µs
dBm
dBm
dB/V
deg/
dB
dB
dB
%
Test Condition
Pout GSM = 35dBm,
Vapc = controlled
Vapc = 2.2V
VDD = 3.0V, Vapc = 2.2V,
Tc = +85°C
Vapc = 0.2 V
Pout GSM = 35dBm (GSM mode)
Measured at f = 1760 to 1830MHz,
Pin(GSM) = +1dBm
Pout GSM = 0 to 35.0dBm
VDD = 3 to 5.1V, Pout ≤ 35.0dBm,
Vapc GSM ≤ 2.2V GSM pulse.
Rg = 50Ω, Tc = 25°C,
Output VSWR = 6 : 1 All phases
VDD = 3 to 5.1V, Pout GSM ≤ 35.0dBm,
Vapc GSM ≤ 2.2V GSM pulse.
Rg = 50Ω, t = 20sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
f0 = 915MHz, frx = f0 +10MHz
Pout GSM = 35dBm, RES BW = 100kHz
f0 = 915MHz, frx = f0 +20MHz
Pout GSM = 35dBm, RES BW = 100kHz
Pout GSM = 0 to 35dBm
Pout GSM = 34 to 35dBm
f0 = 915MHz, (Pin = +1dBm)
Other sig. = 895MHz (Pin = −40dBc)
Pout GSM = 33.5dBm
f0 = 915MHz, (Pin = +1dBm)
Other sig. = 905MHz (Pin = −40dBc)
Pout GSM = 33.5dBm
Pout GSM = +5dBm,
4%AM modulation at input
50kHz modulation frequency
4
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