LND821 データシートの表示（PDF） - Linear Dimensions Semiconductor
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LND821 Datasheet PDF : 4 Pages
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LND820/821/822/823
SOURCE-DRAIN RATING AND CHARACTERISTICS
Symbol
IS
ISM
VSD
trr
Qrr
tON
Parameter
Continuous Source
Current
Pulsed Source Current
(Body Diode) (1)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
Min Typ Max Units
MOSFET symbol showing -
the integral reverse p-n
junction diode
-
-
2.5
A
-
8.0
TJ=25°C, IS=2.5A,
VGS=0V(4)
TJ=25°C, IF=2.1A,
di/dt=100A/µs (4)
-
-
1.6
V
-
-
520
nS
-
0.70 1.4
µC
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature
2 : VDD=50V, starting TJ =25°C,L=60mH RG=25Ω, IAS =2.5A
3 : ISD ≤ 2.5A, di/dt≤50 A/µs, VDD ≤ V(BR)DSS ,TJ≤150°C
4 : Pulse width≤ 300µs; duty cycle≤ 2%
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
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