2SK2925L-E データシートの表示（PDF） - Renesas Electronics
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2SK2925L-E Datasheet PDF : 9 Pages
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2SK2925(L),2SK2925(S)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
ID = 10 A 5 A 2 A
0.2
VGS = 4 V
0.1
0
10 V
10 A 2, 5 A
–40
0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200
VGS = 0, Ta = 25°C
100
50
20
10
5
0.1 0.2 0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
ID = 10 A
80
16
VDD = 50 V
25 V
60 VDS
10 V
12
VGS
40
8
20
VDD = 50 V
4
25 V
10 V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.1 0.2
0.5 1
VDS = 10 V
Pulse Test
2 5 10 20
Drain Current ID (A)
1000
500
200
100
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
td(off)
30
tf
td(on)
tr
10
3
1
0.1 0.2
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.5 1 2 5 10 20
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 8
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