HAF2007(S) データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

HAF2007(S)

Silicon N Channel MOS FET Series Power Switching

Hitachi -> Renesas Electronics 

HAF2007(L), HAF2007(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Typical Operation Characteristics

Ratings

Unit

60

V

(16)

V

(–2.5)

V

5

A

10

A

5

A

20

W

150

°C

–55 to +150

°C

Item

Symbol Min Typ Max Unit Test Conditions

Input voltage

Input current

(Gate non shut down)

Input current

(Gate non shut down)

Shut down temperature

Gate operation voltage

VIH

VIL

I IH1

I IH2

I IL

I IH(sd)1

I IH(sd)2

Tsd

Vop

3.5 — — V

— — 1.2 V

— — 100 µA Vi = 8V, VDS = 0

— — 50 µA Vi = 3.5V, VDS = 0

—— 1

µA Vi = 1.2V, VDS = 0

— 0.8 — mA Vi = 8V, VDS = 0

— 0.35 — mA Vi = 3.5V, VDS = 0

— 175 — °C Channel temperature

3.5 — 12 V

2

Share Link: