HAF2007S データシートの表示（PDF） - Hitachi -> Renesas Electronics
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HAF2007S Datasheet PDF : 6 Pages
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HAF2007(L), HAF2007(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
I D1
Drain current
I D2
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS1
I GSS2
I GSS3
I GSS4
Input current (shut down)
I GS(op)1
I GS(op)2
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)
(5) —
—
—
60
—
(16) —
(–2.5) —
—
—
—
—
—
—
—
—
—
0.8
—
0.35
—
—
1.0 —
—
100
—
A
10
mA
—
V
—
V
—
V
100 µA
50
µA
1
µA
–100 µA
—
mA
—
mA
10
µA
2.25 V
160 mΩ
VGS = 3.5V, VDS = 2V
VGS = 1.2V, VDS = 2V
ID = 10mA, VGS = 0
IG = (300µA), VDS = 0
IG = (–100µA), VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VGS = 1.2V, VDS = 0
VGS = –2.4V, VDS = 0
VGS = 8V, VDS = 0
VGS = 3.5V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 2.5A, VGS = 4V Note3
Static drain to source on state
resistance
RDS(on)
—
70
100
mΩ
ID = 2.5A, VGS = 10V Note3
Forward transfer admittance
Output capacitance
|yfs|
(5)
Coss —
(18) —
(260) —
S
ID = 2.5A, VDS = 10V Note3
pF
VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
t d(on)
—
() —
µs
ID = 2.5A, VGS = 5V
Rise time
tr
—
() —
µs
RL = 12Ω
Turn-off delay time
t d(off)
—
() —
µs
Fall time
tf
—
() —
µs
Body–drain diode forward voltage VDF
—
(1.0) —
V
IF = 2.5A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
() —
ns
IF = 5A, VGS = 0
diF/ dt =50A/µs
Over load shut down
t os1
—
() —
ms
VGS = 5V, VDD = 12V
operation time Note4
t os2
—
() —
ms
VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.
3
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