2SB1657 データシートの表示（PDF） - NEC => Renesas Technology

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2SB1657

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

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DATA SHEET

SILICON TRANSISTOR

2SB1657

AUDIO FREQUENCY AMPLIFIER, SWITCHING

PNP SILICON EPITAXIAL TRANSISTORS

FEATURES

• Low VCE(sat)

VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA)

• High DC Current Gain

hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)

ABSOLUTE MAXIMUM RATINGS

Maximum Voltage and Current (TA = 25 °C)

Collector to Base Voltage

VCB0

−30 V

Collector to Emitter Volteage

VCE0

−30 V

Emitter to Base Voltage

VEB0

−6.0 V

Collector Current (DC)

IC(DC)

−5.0 A

Collector Current (Pulse)*

IC(Pulse)

−8.0 A

Base Current (DC)

IB(DC)

−1.0 A

* PW ≤ 10ms, Duty Cycle ≤ 10 %

Maximum Power Dissipation

Total Power Dissipation (TC = 25 °C) PT

10 W

Total Power Dissipation (TA = 25 °C) PT

1.0 W

Maximum Temperature

Junction Temperature

Tj

150 °C

Storage Temperature

Tstg −55 to 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

characteristics

Collector Cutoff Currnet

Emitter Cutoff Current

DC Current Gain

DC Current Gain

Collector Saturation Voltage

Collector Saturation Voltage

Collector Saturation Voltage

Collector Saturation Voltage

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

SYMBOL

ICB0

IEB0

hFE1

hFE2

VCE(sat)1

VCE(sat)2

VCE(sat)3

VCE(sat)4

VBE(sat)

fT

Cob

TEST CONDITIONS

VCB = −30 V, IE = 0

VEB = −6.0 V, IC = 0

VCE = −2.0 V, IC = −0.5 A

VCE = −2.0 V, IC = −3.0 A

IC = −0.5 A, IB = −25 mA

IC = −1.0 A, IB = −50 mA

IC = −2.0 A, IB = −100 mA

IC = −3.0 V, IB = −75 mA

IC = −1.0 A, IB = −50 mA

VCE = −10 V, IE = −50 mA

VCB = −10 V, IE = 0, f = 1 MHz

PACKAGE DIMENSIONS

in millimeters (inches)

8.5 MAX.

(0.334 MAX.)

2.8 MAX.

(0.110 MAX.)

φ 3.2 ± 0.2 (φ 0.126)

1 23

1.2

(0.047)

0.8+−00..0058

(0.031)

2.3 2.3

(0.090) (0.090)

0.55+−00..0058

(0.021)

1.2

(0.047)

1. Emitter

2. Collector connected to mounting plane

3. Base

MIN.

150

70

TYP.

−0.08

−0.13

−0.24

−0.46

−0.83

75

60

MAX.

−100

−100

600

−0.15

−0.25

−0.40

−1.0

−1.50

UNIT

nA

nA

−

−

V

V

V

V

V

MHz

pF

The information in this document is subject to change without notice.

Document No. D10627EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

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