PNP3055E データシートの表示（PDF） - Philips Electronics
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PNP3055E Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Product specification
PHP3055E
15 ID, Drain current (Amps)
VDS = 30 V
10
PHP3055E
Tj = 25 C
Tj = 175 C
5
0
0
2
4
6
8
10
VGS, Gate-source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
gfs, Transconductance (S)
4
VDD = 30 V
3
Tj = 175 C
PHP3055E
Tj = 25 C
2
1
0
0
5
10
15
ID, Drain current (Amps)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2.0
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60
-20
20
60
100
140
180
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60
-20
20
60
100
140
180
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Ciss, Coss, Crss, Junction capacitances (pF) PHP3055E
1000
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-source voltage (Volts)
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
March 1997
4
Rev 1.000
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