FCX605TA データシートの表示（PDF） - Zetex => Diodes

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FCX605TA

120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

Zetex => Diodes 

FCX605

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO 140

V

IC=100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO 120

V

IC=10mA*

Emitter-Base Breakdown Voltage V(BR)EBO 10

Collector Cut-Off Current

ICBO

V

100

nA

10

µA

IE=100␮A

VCB =10V

VCB = 120V

Tamb = 100°C

Emitter Cut-Off Current

Collector Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

IEBO

ICES

VCE(sat)

0.1

µA

VEB= 8V

10

µA

VCES=120V

1

V

1.5

V

IC=250mA, IB= 0.25mA*

IC=1A, IB=1mA*

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

2K

Ratio

5K

2K

0.5

Transition Frequency

fT

150

1.8

1.7

100K

Input Capacitance

Output Capacitance

Turn-On Time

Cibo

90

Cobo

15

t(on)

0.5

Turn-Off Time

t(off)

1.6

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

V

V

MHz

pF

pF

µs

µs

IC=1A, IB= 1mA*

IC= 1A, VCE= 5V*

IC= 50mA, VCE= 5V*

IC=500mA, VCE= 5V*

IC=1A, VCE= 5V*

IC=2A, VCE= 5V*

IC=100mA, VCE=10V

f=20MHz

VCB=500mV, f=1MHz

VCB=10V, f=1MHz

IC=500mA, VCE=10V

IB1=IB2=0.5mA

IC=500mA, VCE=10V

IB1=IB2=0.5mA

Nb. Spice parameter data is available upon request for this device.

ISSUE 1 - JULY 2001

3

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