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BSW68A データシートの表示(PDF) - Philips Electronics

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BSW68A
Philips
Philips Electronics Philips
BSW68A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN switching transistors
Product specification
BSW66A; BSW67A; BSW68A
FEATURES
High current (max. 1 A)
High voltage (max. 150 V).
APPLICATIONS
General purpose switching and amplification
Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSW66A
BSW67A
BSW68A
VCEO
collector-emitter voltage
BSW66A
BSW67A
BSW68A
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
100 V
120 V
150 V
Tcase 25 °C
IC = 10 mA; VCE = 5 V
30
IC = 500 mA; VCE = 5 V
30
IC = 100 mA; VCE = 20 V; f = 100 MHz
ICon = 500 mA; IBon = 50 mA; IBoff = 50 mA
100 V
120 V
150 V
1
A
5
W
130
MHz
900
ns
1997 May 05
2

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