BSW68 データシートの表示（PDF） - Philips Electronics
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BSW68 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BSW66A; BSW67A; BSW68A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSW66A
BSW67A
BSW68A
collector-emitter voltage
BSW66A
BSW67A
BSW68A
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
tp ≤ 20 ms
Tamb ≤ 25 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
free air
MIN.
MAX.
UNIT
−
100
V
−
120
V
−
150
V
−
100
V
−
120
V
−
150
V
−
6
V
−
1
A
−
2
A
−
200
mA
−
800
mW
−
5
W
−65
+150
°C
−
200
°C
−65
+150
°C
VALUE
220
35
UNIT
K/W
K/W
1997 May 05
3
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