5962F9669601QXC(1999) データシートの表示（PDF） - Intersil

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5962F9669601QXC
(Rev.:1999)

Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital Converter

Intersil 

Die Characteristics

DIE DIMENSIONS:

180 mils x 197 mils x 21 ±1 mils

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ±1kÅ

Top Metallization:

Metal 1 - Type: Moly/TiW

Thickness: 5.8kÅ ±10%

Metal 2- Type: Al/Si/Cu

Thickness: 10kÅ ±10%

Backside Finish:

Silicon

Metallization Mask Layout

VDDD2

CLK

HS-9008RH

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

VDD

ADDITIONAL INFORMATION:

Worst Case Current Density:

Metal 1 - Designs using the Intersil AVLSI-1RA process

take advantage of the superior current carrying

capabilities of Moly.TiW. The current density limit

established by Intersil Reliability is 5.0 x 105 A/cm2

Metal 2 - 1.63 x 105 A/cm2

Process:

AVLSI1RA

HS-9008RH

VDDD1

1/2R

VSSD1

VIN

VSSD2

VSSA2

VREF-

VDDA2

B1

B2

B3

B4

VSSA1

VREF+

VDDA1

OF

B8

B7

B6

CE1

CE2

VDDA3 VDDD3 VSSD3

VSSA3

B5

4

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