5962F9951101QXC(1999) データシートの表示（PDF） - Intersil
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5962F9951101QXC Datasheet PDF : 2 Pages
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HS-4423RH, HS-4423BRH
Die Characteristics
DIE DIMENSIONS:
4890µm x 3370µm (193 mils x 133 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
GND (5)
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
125
HS-4423RH, HS-4423BRH
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
VCC (12)
OUT A (15)
OUT A (14)
VCC (13)
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