HS-2400RH データシートの表示（PDF） - Intersil

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HS-2400RH

Radiation Hardened PRAM Four Channel Programmable Operational Amplifier

Intersil 

HS-2400RH

Die Characteristics

DIE DIMENSIONS:

88 mils x 67 mils x 19 mils ±1 mils

2240µm x 1710µm x 483µm ±25.4µm

INTERFACE MATERIALS:

Top Metallization:

Type: Al, 1% Cu

Thickness: 16kÅ ±2kÅ

Glassivation:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.).

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

Substrate: Potential (Powered Up)

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

< 2 x 105A/cm2

Transistor Count:

251

Process:

Bipolar Dielectric Isolation

Metallization Mask Layout

HS-2400RH

-IN2 +IN1 -IN1 -IN4 +IN4

-IN3

+IN2

+IN3

V-

D0

OUT

V+

COMP GND ENABLE D1

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

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