HS-139RH-T データシートの表示（PDF） - Intersil
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HS-139RH-T Datasheet PDF : 2 Pages
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Die Characteristics
DIE DIMENSIONS:
3750µm x 2820µm (148 mils x 111 mils)
483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4) over Silox (SiO2
Nitride Thickness: 4.0kA +/- 0.5kA
Silox Thickness: 12.0kA +/- 1.3kA
Top Metallization
Type: AL Si Cu
Thickness: 16.0kA +/- 2kA
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
OUT4
(13)
OUT3
(14)
OUT2
(1)
OUT1
(2)
HS-139RH-T
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
49
HS-139RH-T
GND +IN4
-IN4
(12)
(11)
(10)
V+
-IN1
(3)
(4)
+IN1
(5)
+IN3
(9)
-IN3
(8)
+IN2
(7)
-IN2
(6)
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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