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5962F9863001V9A データシートの表示(PDF) - Intersil

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5962F9863001V9A Datasheet PDF : 2 Pages
1 2
ACS27MS
Die Characteristics
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE POTENTIAL
Unbiased Insulator
Metallization Mask Layout
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 105 A/cm2
Transistor Count: 97
ACS27MS
B1
A1
(2)
(1)
VCC
C1
(14) (13)
A2 (3)
B2 (4)
NC
C2 (5)
(12) Y1
(11) C3
NC
(10) B3
(6)
(7)
(8)
(9)
Y2
GND
Y3
A3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
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ASIA
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Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
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