HS-1254RH データシートの表示（PDF） - Intersil

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HS-1254RH

Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable

Intersil 

Die Characteristics

DIE DIMENSIONS

Size: 1750µm x 2330µm (69 mils x 92 mils)

Thickness: 483µm (19 mils)

GLASSIVATION

Type: Nitride

Thickness: 4kÅ ± 0.5kÅ

METALLIZATION

Metal 1

Type: AlCu(2%)/TiW

Thickness: 8kÅ ± 0.4kÅ

Metal 2

Type: AlCu(2%)

Thickness: 16kÅ ± 0.8kÅ

HS-1254RH

SUBSTRATE

DI, Bonded Wafer

BACKSIDE FINISH

Silicon

SUBSTRATE POTENTIAL

Floating (Recommend connection to V-)

TRANSISTOR COUNT:

180

Metallization Mask Layout

HS-1254RH

-IN1

OUT1 GND (SEE NOTE 1)

V+

+IN1

NC

DISABLE1

V-

DISABLE2

NC

+IN2

OUT2

-IN2

V-

NOTE:

1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when

using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).

2

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