ISPLS1016EA-125LT44 データシートの表示（PDF） - Lattice Semiconductor
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ISPLS1016EA-125LT44 Datasheet PDF : 13 Pages
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Specifications ispLSI 1016EA
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time 10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
1.5ns
1.5V
1.5V
See Figure 3
Table 2-0003/1016EA
Figure 3. Test Load
+ 5V
R1
Device
Output
Test
Point
Output Load Conditions (see Figure 3)
R2
CL*
TEST CONDITION
A
Active High
B
Active Low
Active High to Z
C at VOH -0.5V
Active Low to Z
at VOL+0.5V
R1
470Ω
∞
470Ω
∞
R2
390Ω
390Ω
390Ω
390Ω
CL
35pF
35pF
35pF
5pF
470Ω
390Ω 5pF
Table 2-0004/1016E
*CL includes Test Fixture and Probe Capacitance.
0213a
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP.3 MAX. UNITS
VOL Output Low Voltage
IOL = 8 mA
—
— 0.4
V
VOH Output High Voltage
IOH = -2 mA, VCCIO = 3.0V
IOH = -4 mA, VCCIO = 4.75V
2.4
—
—
V
2.4
—
—
V
IIL
Input or I/O Low Leakage Current
0V ≤ VIN ≤ VIL (Max.)
—
— -10 µA
IIH
Input or I/O High Leakage Current
(VCCIO - 0.2)V ≤ VIN ≤ VCCIO
VCCIO ≤ VIN ≤ 5.25V
—
— 10 µA
—
— 10 µA
IIL-PU I/O Active Pull-Up Current
0V ≤ VIN ≤ VIL
—
— -200 µA
IOS1 Output Short Circuit Current
VCCIO = 5.0V or 3.3V, VOUT = 0.5V
—
— -240 mA
ICC2, 4, 5 Operating Power Supply Current
VIL = 0.0V, VIH = 3.0V
fTOGGLE = 1 MHz
—
91
— mA
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
Table 2-0007/1016EA
2. Measured using four 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25°C.
4. Unused inputs held at 0.0V.
5. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the
Power Consumption section of this data sheet and the Thermal Management section of the Lattice Semiconductor
Data Book CD-ROM to estimate maximum ICC.
5
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