Memory ICs
BA6129AF / BA6162 / BA6162F
•Electrical characteristics
BA6129AF (unless otherwise noted, Ta = 25°C, VRRES = VCC = 5V, RRES = 10kΩ)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
No-load current dissipation
ICC
—
— 2.0 mA VCC = 5V, VBAT = 3V
I / O voltage differential 1
VSAT1
— 0.03 0.05 V VCC = 5V, VBAT = 3V, IO = – 1mA
Vo output voltage 1
VO1
4.95 4.97 —
V VCC = 5V, VBAT = 3V, IO = – 1mA
Vo output voltage 2
VO2
4.70 4.90 —
V VCC = 5V, VBAT = 3V, IO = – 15mA
Vo output voltage 3
VO3
4.50 4.86 —
V VCC = 5V, VBAT = 3V, IO = – 30mA
Detection voltage
VS
3.35 3.50 3.65 V VCC = H→L
Detection hysteresis voltage
VSH
— 100 — mV VCC = L→H
Reset output low level voltage
VRESL
—
— 0.4
V VCC = 3V
Reset leakage current
IRESH
—
—
0.1
µA VCC = 5V, VRRES = 7V
Reset operating limit voltage
VOPL
—
0.8 1.2
V VCC = H→L, VRES Ϲ 0.4V
CS output low level voltage
VCSL
—
— 0.1
V VCC = 3V, VBAT = 3V, ICS = + 1µA
CS output high level voltage
VCSH
4.9
—
—
V VCC = 5V, VBAT = 3V, ICS = – 1µA
CSB output low level voltage
VCSBL
—
— 0.1
V VCC = 5V, VBAT = 3V, ICSB = + 1µA
CSB output high level voltage
VCSBH Vo – 0.1 —
—
V VCC = 3V, VBAT = 3V, ICSB = – 1µA
Detection voltage temperature characteristic VS – 0.05 — + 0.05 % / °C
—
Switching voltage
VB
3.15 3.30 3.45 V VCC = H→L, VBAT = 3V, RO = 200kΩ
Switching hysteresis voltage
VBH
— 100 — mV VCC = L→H, VBAT = 3V, RO = 200kΩ
Switching voltage temperature characteristic VB – 0.05 — + 0.05 % / °C
—
Backup current dissipation
ICCB
—
—
0.5
µA VCC = GND, VBAT = 3V
I / O voltage differential 2
VSAT2
— 0.20 0.30 V VCC = GND, VBAT = 3V, IO = – 1µA
Vo output voltage 4
VO4
2.70 2.80 —
V VCC = GND, VBAT = 3V, IO = – 1µA
Vo output voltage 5
VO5
2.60 2.67 —
V VCC = GND, VBAT = 3V, IO = – 100µA
Vo output voltage 6
Reverse current
VO6 VCC – 0.5 —
—
V IO = – 80mA
IOR
—
—
0.1
µA VCC = 5V, VBAT = GND
(Note) IO, ICS, and ICSB are + when flowing toward the pin and – when flowing away from the pin.
᭺ Not designed for radiation resistance.
3