SCM6341ZP12A データシートの表示（PDF） - Motorola => Freescale
部品番号
コンポーネント説明
メーカー
SCM6341ZP12A Datasheet PDF : 10 Pages
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TRUTH TABLE (X = Don’t Care)
E1 E2 E3
G
W
H
X
X
X
X
X
L
X
X
X
X
X
H
X
X
L
H
L
H
H
L
H
L
L
H
L
H
L
X
L
Mode
Not Selected
Not Selected
Not Selected
Output Disabled
Read
Write
I/O Pin
High–Z
High–Z
High–Z
High–Z
Dout
High–Z
Cycle
—
—
—
—
Read
Write
Current
ISB1, ISB2
ISB1, ISB2
ISB1, ISB2
IDDA
IDDA
IDDA
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
VDD
– 0.5 to + 5.0
V
Voltage Relative to VSS for Any Pin
Except VDD
Vin, Vout – 0.5 to VDD + 0.5
V
Output Current (per I/O)
Iout
± 20
mA
Power Dissipation
Temperature Under Bias
Commercial
Industrial
PD
Tbias
1.0
W
– 10 to + 85
°C
– 45 to + 90
Storage Temperature — Plastic
Tstg
– 55 to + 150
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid ap-
plication of any voltage higher than maximum
rated voltages to these high–impedance circuits.
This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
MOTOROLA FAST SRAM
MCM6341
3
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