PF5010 データシートの表示（PDF） - Won-Top Electronics
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PF5010 Datasheet PDF : 2 Pages
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W TE
POWER SEMICONDUCTORS
PF5000 – PF5010
50A 1/2" PRESS-FIT DIODE
Features
! Diffused Junction
! Low Leakage
! Low Cost
! High Surge Current Capability
! Typical IR less than 10µA
Mechanical Data
! Case: All Copper Case and Components
Hermetically Sealed
! Terminals: Contact Areas Readily Solderable
! Polarity: Cathode to Case(Reverse Units Are
Available Upon Request and Are Designated G
By An “R” Suffix, i.e. PF5002R or PF5010R)
! Polarity: Red Color Equals Standard,
Black Color Equals Reverse Polarity
! Mounting Position: Any
A
D
C
E
F
DO-21
Dim Min
Max
A
15.63 16.14
B
12.75 12.83
C
8.89 10.04
D
1.25
1.30
E
3.05
3.30
F
5.59
6.1
G
28.82
—
All Dimensions in mm
B
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol PF5000 PF5001 PF5002 PF5004 PF5006 PF5008 PF5010 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
50
100 200 400 600 800 1000
V
VR
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current @TA = 150°C
IO
50
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
500
A
rated load (JEDEC Method)
Forward Voltage
@IF = 100A
VFM
1.08
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
10
500
µA
Typical Junction Capacitance (Note 1)
Cj
300
pF
Typical Thermal Resistance Junction to Case
(Note 2)
RJC
1.2
K/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
°C
*Glass passivated forms are available upon request
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
PF5000 – PF5010
1 of 2
© 2002 Won-Top Electronics
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