G8421-03 データシートの表示（PDF） - Hamamatsu Photonics
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G8421-03 Datasheet PDF : 4 Pages
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InGaAs PIN photodiode G8421/G8371/G5851 series
s Spectral response
(Typ.)
1.4
1.2
1.0
T=25 ˚C
0.8
0.6
T= -10 ˚C
0.4
0.2
T= -20 ˚C
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
WAVELENGTH (µm)
KIRDB0221EA
s Dark current vs. reverse voltage
Non-cooled type
10 µA
(Typ. Ta=25 ˚C)
1 µA
100 nA
G8371-03
G8371-01
s Photo sensitivity temperature characteristic
(Typ.)
2
1
0
-1
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
WAVELENGTH (µm)
KIRDB0208EA
TE-cooled type
1 µA
G5851-23 (T= -20 ˚C)
100 nA
(Typ.)
G5851-13 (T= -10 ˚C)
10 nA
G5851-21
(T= -20 ˚C)
G5851-11 (T= -10 ˚C)
10 nA
G8421-05
G8421-03
1 nA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0232EA
s Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
G8371-03
G5851-13/-23
G8371-01
G5851-11/-21
10 pF
1 pF
0.1
G8421-05
G8421-03
G5851-103/-203
1
REVERSE VOLTAGE (V)
10
KIRDB0233EA
2
1 nA
G5851-103 (T= -10 ˚C)
G5851-203 (T= -20 ˚C)
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0223EA
s Shunt resistance vs. element temperature
10 MΩ
1 MΩ
(Typ. VR=10 mV)
G8421-03
G5851-103/-203
G8421-05
100 kΩ
10 kΩ
1 kΩ
G8371-01
G5851-11/-21
G8371-03
G5851-13/-23
100 Ω
-40 -20 0
20 40 60
80 90 100
ELEMENT TEMPERATURE (˚C)
KIRDB0234EA
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