G8909-01(2004) データシートの表示（PDF） - Hamamatsu Photonics

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G8909-01
(Rev.:2004)

InGaAs PIN photodiode array

Hamamatsu Photonics 

I Spectral response

1

(Typ. Ta=25 ˚C)

0.5

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

WAVELENGTH (µm)

KIRDB0002EB

I Terminal capacitance vs. reverse voltage

10 pF

(Typ. Ta=25 ˚C, f=1 MHz)

1 pF

100 fF

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

KIRDB0267EA

I Cross-talk characteristic

(Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V)

100

250 µm

10

1

0.1

0.01

-250

-200

-150

-100

-50

POSITION X (µm)

0

KIRDB0269EA

InGaAs PIN photodiode array G8909-01

I Dark current vs. reverse voltage

1 nA

(Typ. Ta=25 ˚C)

100 pA

10 pA

1 pA

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

KIRDB0266EA

I Dark current vs. temperature

100 nA

(Typ. VR=5 V)

10 nA

1 nA

100 pA

10 pA

20

30

40

50

60

70

80

TEMPERATURE (˚C)

KIRDB0268EA

2

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