MBRS340 データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

MBRS340

SCHOTTKY POWER RECTIFIER

Fairchild Semiconductor 

MBRS340

SCHOTTKY POWER RECTIFIER

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

General Description:

Schottky Barrier Diodes make use of the rectification effect

of a metal to silicon barrier. They are ideally suited for high

frequency rectification in switching regulators & converters.

This device offers a low forward voltage performance in a

power surface mount package in applications where size and

weight are critical.

Features:

• Compact surface mount package with J-bend leads (SMC).

• 3.0 Watt Power Dissipation package.

• 3.0 Ampere, forward voltage less than 525 mv

Ordering:

• 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel.

Absolute Maximum Ratings* TA = 25OC unless otherwise noted

Parameter

Value

Storage Temperature

-65 to +150

Maximum Junction Temperature

-65 to +125

Repetitive Peak Reverse Voltage (VRRM)

40

Average Rectified Forward Current (TL = 100OC)

3.0

(TL = 90OC)

4.0

Surge Non Repetitive Forward Current

80

(Half wave, single phase, 60 Hz)

Junction to Case for Thermal Resistance (RØJL)

11

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

SMC Package

(DO-214AB)

Units

OC

OC

V

A

A

A

OC/W

Top Mark: B34

1

2

Electrical Characteristics TA = 25OC unless otherwise noted

Actual Size

SYM

CHARACTERISTICS MIN

IR Reverse Leakage Current

PW 300 us, <2% Duty Cycle

VF Forward Voltage

PW 300 us, <2% Duty Cycle

MAX

2.0

20

525

UNITS

mA

mA

mV

TEST CONDITIONS

VR = 40 V; Tj = 25OC

VR = 40 V; Tj = 100OC

IF = 3.0 A; Tj = 25OC

© 1997 Fairchild Semiconductor Corporation

Share Link: