EDL1216CASA
Precharge command (/CS, /RAS, /WE = Low, /CAS = High)
This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are
precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged.
After this command, the Mobile RAM can’t accept the activate command to the precharging bank during tRP
(precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising.
CLK
CKE H
/CS
/RAS
/CAS
/WE
BA0, BA1
A10
(Precharge select)
Add
Precharge command
Write command (/CS, /CAS, /WE = Low, /RAS = High)
This command sets the burst start address given by the column address to begin the burst write operation. The first
write data in burst mode can input with this command with subsequent data on following clocks.
CLK
CKE H
/CS
/RAS
/CAS
/WE
BA0, BA1
A10
Add
Col.
Write command
Read command (/CS, /CAS = Low, /RAS, /WE = High)
Read data is available after /CAS latency requirements have been met. This command sets the burst start address
given by the column address.
CLK
CKE H
/CS
/RAS
/CAS
/WE
BA0, BA1
A10
Add
Col.
Read command
Data Sheet E0195E30 (Ver. 3.0)
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