BGA425 データシートの表示（PDF） - Infineon Technologies
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BGA425 Datasheet PDF : 8 Pages
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BGA 425
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024 fA
VAF = 39.251 V
NE = 1.7763 -
VAR = 34.368 V
NC = 1.3152 -
RBM = 1.3491
CJE = 3.7265 fF
TF =
4.5899 ps
ITF = 1.3364 mA
VJC = 0.99532 V
TR = 1.4935 ns
MJS = 0
-
XTI = 3
-
BF =
83.23
-
IKF = 0.16493 A
BR = 10.526 -
IKR = 0.25052 A
RB = 15
RE = 1.9289
VJE = 0.70367 V
XTF = 0.3641 -
PTF = 0
deg
MJC = 0.48652 -
CJS = 0
fF
XTB = 0
-
FC = 0.99469 -
NF = 1.0405 -
ISE = 15.761 fA
NR = 0.96647 -
ISC = 0.037223 fA
IRB = 0.21215 A
RC = 0.12691
MJE = 0.37747 -
VTF = 0.19762 V
CJC = 96.941 fF
XCJC = 0.08161 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
RS = 20
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C 12
LBI1 = 0.4
nH
LBI2 = 0.7
nH
C 21
LBO1 = 0.3
nH
LBO2 = 0.3
nH
LEI =
0.3
nH
L BO2
RF IN
L BI2 14
13 L CI2
L BO1
+V
C 11
BGA 425
L BI1 16
Chip
11 L CI1
C 22
L CO2
L CO1
OUTA
OUTB
LEO =
LCI1 =
LCI2 =
0.1
0.4
0.4
nH
nH
nH
C’-E’-
Diode
C BE2
C BE1
12, 15
C CE1
C CE2
LCO1 = 0.3
nH
LCO2 = 0.3
nH
CBE1 = 200
fF
L EI
CBE2 = 200
fF
CCE1 = 200
fF
L EO
GND
CCE2 = 200
fF
C11 = 5
fF
EHA07377
C22 =
5
fF
Extracted on behalf of SIEMENS Small Signal Semiconductors by: C12 =
50
fF
Institut für Mobil-und Satellitentechnik (IMST)
C21 = 50
fF
1996 SIEMENS AG
Valid up to 3GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or salesoffice
to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
7
Oct-12-1999
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