NTE2345 データシートの表示（PDF） - NTE Electronics

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NTE2345

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base–Emitter Voltage

Collector–Emitter Saturation Voltage

Small–Signal Current Gain

Cut–Off Frequency

Diode, Forward Voltage

Second Breakdown Collector Current

Non–Repetitive, without Heatsink

VBE

VCE(sat)

hfe

fhfe

VF

I(SB)

IC = 3A, VCEO = 3V, Note 2

IC = 3A, IB = 12mA

IC = 3A, VCEO = 3V, f = 1MHz

IC = 3A, VCEO = 3V

IF = 3A

VCEO = 60V, tp = 25ms

2.5 –

2.0 –

10

–

– 100

– 1.8

1

–

–V

–V

–

– kHz

–V

–A

Turn–On Time

Turn–Off Time

ton

IC(on) = 3A, IB(on) = IB(off) = 12mA

toff

IC(on) = 3A, IB(on) = IB(off) = 12mA

–

1

2 µs

–

5

10 µs

Note 2. VBE decreases by about 3.8mV/K with increasing temperature.

Schematic Diagram

C

C

B

B

NPN

E

.307 (7.8)

Max

.100 (2.54)

.118 (3.0)

Min

.147

(3.75)

.437

(11.1)

Max

BC E

.100 (2.54)

.602

(15.3)

Min

E

PNP

See Note

.090 (2.29)

.047 (1.2)

Note: Collector connected to metal part of mounting surface.

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