NTE54 データシートの表示（PDF） - NTE Electronics

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NTE54

Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 2)

VCE(sus)

ICEO

ICBO

IEBO

IC = 10mA, IB = 0, Note 2

VCE = 150V, IB = 0

VCE = 150V, IE = 0

VCE = 150V, IC = 0

DC Current Gain

DC Current Gain Linearity

hFE VCE = 2V, IC = 0.1A

VCE = 2V, IC = 2A

VCE = 2V, IC = 0.1A

VCE = 2V, IC = 0.1A

hFE VCE from 2V to 20V,

IC from 0.1A to 3A

NPN to PNP

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

VCE(sat) IC = 1A, IB = 0.1A

VBE(on) VCE = 2V, IC = 1A

Current Gain–Bandwidth Product

ft

VCE = 10V, IC = 500mA,

ftest = 10MHz, Note 3

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Note 3. fT = |hfe|  ftest

.420 (10.67)

Max

.110 (2.79)

Min Typ Max Unit

150 –

–

V

–

– 0.1 mA

–

– 10 µA

–

– 10 µA

40 –

–

40 –

–

40 –

–

20 –

–

–

2

–

–

3

–

–

– 0.5 V

–

–

1

V

30 –

– MHz

.147 (3.75)

Dia Max

.500

(12.7)

Max

.070 (1.78) Max

Base

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab

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