NTE123A データシートの表示（PDF） - NTE Electronics

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NTE123A

NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose

NTE Electronics 

Electrical Characteristics: (TA = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

NTE123A

NTE159M

V(BR)CEO

IC = 10mA, IB = 0

40 –

–

V

60 –

–

V

Collector–Base Breakdown Voltage

NTE123A

NTE159M

V(BR)CBO

IC = 10µA, IE = 0

75 –

–

V

60 –

–

V

Emitter–Base Breakdown Voltage

NTE123A

NTE159M

V(BR)EBO

IE = 10µA, IC = 0

6

–

–

V

5

–

–

V

Collector Cutoff Current

NTE123A

ICEX

VCE = 60V, VEB(off) = 3V

–

– 10

nA

NTE159M

Collector Cutoff Current

NTE123A

NTE159M

Emitter Cutoff Current (NTE123A Only)

Base Cutoff Current

NTE123A

NTE159M

ON Characteristics

ICBO

IEBO

IBL

VCE = 30V, VBE = 500mV

VCB = 60V, IE = 0

VCB = 60V, IE = 0, TA = +150°C

VCB = 50V, IE = 0

VCB = 50V, IE = 0, TA = +150°C

VEB = 3V, IC = 0

VCE = 60V, VEB(off) = 3V

VCE = 30V, VEB(off) = 500mV

–

– 50 nA

–

– 0.01 µA

–

– 10 µA

–

– 0.01 µA

–

– 10 µA

–

– 10 nA

–

– 20 nA

–

– 50 nA

DC Current Gain

NTE123A

hFE

VCE = 10V IC = 0.1mA, Note 1

35 –

–

IC = 1mA

50 –

–

IC = 10mA, Note 1

75 –

–

IC = 10mA, TA = –55°C 35 –

–

IC = 150mA, Note 1

100 – 300

VCE = 1V, IC = 150mA, Note 1

50 –

–

VCE = 10V IC = 500mA, Not e 1

40 –

–

NTE159M

IC = 0.1mA

75 –

–

IC = 1mA

100 –

–

IC = 10mA

100 –

–

IC = 150mA, Note 1

100 – 300

IC = 500mA, Note 1

50 –

–

Collector–Emitter Saturation Voltage

NTE123A

VCE(sat)

IC = 150mA, IB = 15mA, Note 1

–

– 0.3

V

IC = 500mA, IB = 50mA, Note 1

–

– 1.0

V

NTE159M

IC = 150mA, IB = 15mA, Note 1

–

– 0.4

V

IC = 500mA, IB = 50mA, Note 1

–

– 1.6

V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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