NTE2350PNP データシートの表示（PDF） - NTE Electronics

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NTE2350PNP

Silicon Darlington Transistors High Current, General Purpose

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

hFE IC = 25A, VCE = 5V

1000 – 18000

IC = 50A, VCE = 5V

400 –

–

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

VCE(sat)

VBE(sat)

IC = 25A, IB = 250mA

IC = 50A, IB = 500mA

IC = 25A, IB = 200mA

IC = 50A, IB = 300mA

–

– 2.5 V

–

– 3.5 V

–

– 3.0 V

–

– 4.5 V

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Schematic Diagram

C

C

B

B

E

NPN

E

PNP

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

.215 (5.45)

.430

(10.92)

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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