NTE525 データシートの表示（PDF） - NTE Electronics

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NTE525

Silicon Diode High Voltage Fast Recovery Switch

NTE Electronics 

NTE525

Silicon Diode

High Voltage Fast Recovery Switch

Features:

D Fast Switching

D Low Leakage

D High Current Capability

D High Surge Capability

D High Reliability

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified, Note 1)

Maximum Recurrent Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

Maximum RMS Voltage, VRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V

Maximum DC Blocking Voltage, VDC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

Maximum Average Forward Rectified Current (TA = +50°C, .375” Lead Length), IO . . . . . . . 200mA

Peak Forward Surge Current (8.3ms single half sine–wave superimposed), IFSM . . . . . . . . . . . 30A

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Note 1. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current

by 20%.

Electrical Characteristics: (TA = +25°C unless otherwise specified, Note 1)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Maximum Instantaneous Forward Voltage

VF IF = 0.5A/0.2A DC

––4V

Maximum DC Reverse Current

IR VDC = 2000V

– – 5 µA

Maximum Full Load Reverse Current Average IR TA = +55°C, .375” Lead Length – – 100 µA

Maximum Reverse Recovery Time

trr IF = 0.5A, IR = 1A, IRR = 0.25A

– – 500 ns

Note 1. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current

by 20%.

1.100

(27.94)

Min

.210 (5.33)

Max

.034 (0.87) Dia Max

.107 (2.72) Dia Max

Color Band Denotes Cathode

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