XR-85 データシートの表示（PDF） - Shanghai Sunrise Electronics

部品番号

コンポーネント説明

メーカー

XR-85

SILICON EPITAXIAL PLANAR SWITCHING DIODE

Shanghai Sunrise Electronics 

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

XR-85

SILICON EPITAXIAL

PLANAR SWITCHING DIODE

REVERSE VOLTAGE: 20V

FORWARD CURRENT: 100mA

TECHNICAL

SPECIFICATION

FEATURES

• Small glass structure ensures high reliability

• Low leakage

• High temperature soldering guaranteed:

250oC/10S/9.5mm lead length

at 5 lbs tension

DO - 34

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25oC ambient temperature unless otherwise specified)

RATINGS

SYMBOL

VALUE

Reverse Voltage

VR

20

Peak Reverse Voltage

VRM

35

Forward Current (average)

IO

100

Forward Voltage (IF=10mA)

VF

1

Reverse Current (VR=20V)

IR1

100

Reverse Current (VR=20V,TJ=100oC)

IR2

10

Capacitance

(Note 1)

Ct

1.5

Forward Differential Resistor (IF=10mA, f=100MHz)

rF

0.6

Thermal Resistance

(junction to ambient)

(Note 2)

Rθ(ja)

0.35

Operating Junction and Storage Temperature Range

TSTG,TJ

-55 ~ +150

Notes:

1: VR=10V, f=1 MHz

2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

UNITS

V

V

mA

V

nA

µA

pF

Ω

oC/mW

oC

http://www.sse-diode.com

Share Link: