BF992 データシートの表示（PDF） - Philips Electronics
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BF992 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
APPLICATIONS
• VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
handbook, halfpage
4
3
d
g2
g1
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
2
s,b
Top view
MAM039
Marking code: M92.
Fig.1 Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Yfs
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
Cig1-s
input capacitance at gate 1
Crs
reverse transfer capacitance
F
noise figure
Tj
operating junction temperature
CONDITIONS
Tamb = 60 °C
f = 1 kHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
GS = 2 mS; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V; f = 200 MHz
TYP.
−
−
−
25
4
30
1.2
−
MAX.
20
40
200
−
−
−
−
150
UNIT
V
mA
mW
mS
pF
fF
dB
°C
1999 Aug 11
2
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