BPW14NC データシートの表示（PDF） - Temic Semiconductors
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BPW14NC Datasheet PDF : 6 Pages
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Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of ±12° makes it
insensible to ambient straylight. A base terminal is avail-
able to enable biasing and sensitivity control.
Features
D Hermetically sealed case
D Lens window
D Narrow viewing angle ϕ = ± 10°
D Exact central chip alignment
D Base terminal available
D High photo sensitivity
D Fast response times
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
x tp/T = 0.5, tp 10 ms
x Tamb 25 °C
xt 5 s
BPW14N
94 8486
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
RthJC
Value
32
32
5
50
100
310
150
–55...+150
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
TELEFUNKEN Semiconductors
1 (6)
Rev. A2, 15-Jul-96
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