NTE2640 データシートの表示（PDF） - NTE Electronics

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NTE2640

Silicon NPN Transistor Color TV Horizontal Deflection Output

NTE Electronics 

NTE2640

Silicon NPN Transistor

Color TV Horizontal Deflection Output

Features:

D High Speed

D High Collector–Emitter Breakdown Voltage

D High Reliability

D On–Chip Damper Diode

Absolute Maximum Ratings: (TA + 25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Collector Dissipation, PC

TA + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

TC + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA + 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

ICBO VCE = 800V, IE = 0

–

– 10 µA

Emitter Cutoff Current

Collector–Emitter Sustaining Voltage

ICES

IEBO

VCEO(sus)

VCE = 1500V, RBE = 0

VEB = 4V, IC = 0

IC = 100mA, IB = 0

–

– 1.0 mA

40 –

– mA

800 –

–

V

Collector–Emitter Saturation Voltage VCE(sat) IC = 3.15A, IB = 630mA

–

– 3.0 V

Base–Emitter Saturation Voltage

VBE(sat) IC = 3.15A, IB = 630mA

–

– 1.5 V

DC Current Gain

Diode Forward Voltage

Fall Time

hFE VCE = 5V, IC = 500mA

10 –

–

VCE = 5V, IC = 3.5A

5

–

8

VF

IEC = 6A

–

–

2

V

tf

VCC = 200V, VBE = –2V, IC = 2A,

–

– 0.3 µs

IB1 = 400mA, IB2 = 800mA,

Pulse Width = 20µs, Duty Cycle ≤ 1%

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