NTE235 データシートの表示（PDF） - NTE Electronics
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NTE235 Datasheet PDF : 2 Pages
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NTE235
Silicon NPN Transistor
Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0
Collector–Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150Ω
Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
Emitter Cutoff Current
IEBO VEB = 4V, IC = 0
DC Current Gain
hFE VCE = 5V, IC = 500mA
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA
Base–Emitter Saturation Voltage
VBE(sat) IC = 1A, IB = 100mA
Current Gain–Bandwidth Product
fT VCE = 10V, IC = 100mA
Output Capacitance
Cob VCB = 10V, f = 1MHz
Power Output
Collector Efficiency
PO VCC = 12V, Pin = 0.2W,
η
f = 27MHz
Min Typ Max Unit
80 – – V
75 – – V
5––V
– – 10 µA
– – 10 µA
25 – 200
– 0.15 0.6 V
– 0.9 1.2 V
100 150 – MHz
– 45 60 pF
4.0 – – W
60 – – %
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