NTE2354 データシートの表示（PDF） - NTE Electronics

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NTE2354

Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT

NTE Electronics 

NTE2354

Silicon NPN Transistor

High Voltage Horizontal Output for High Definition CRT

Applications:

D High–definition color display horizontal deflection output

Features:

D Fast speed: tf = 100ns Typ

D High breakdown voltage: VCBO = 1500V

D High reliability

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Collector Sustain Voltage

Emitter Cutoff Current

Saturation Voltage

Collector–to–Emitter

ICES

VCEO(sus)

IEBO

VCE(sat)

VCE = 1500V, RBE = 0

IC = 100mA, IB = 0

VEB = 4V, IC = 0

IC = 8A, IB = 2.0A

– – 1.0 mA

800 – – V

– – 1.0 mA

– – 5.0 V

Saturation Voltage

Base–to–Emitter

VBE(sat) IC = 8A, IB = 2.0A

– – 1.5 V

DC Current Gain

Storage Time

Fall Time

hFE VCE = 5V, IC = 1.0A

8–––

tstg IC = 6A, IB1 = 1.2A, IB2 = –2.4A – – 3.0 µs

tf

IC = 6A, IB1 = 1.2A, IB2 = –2.4A – 0.1 0.2 µs

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