NTE2325 データシートの表示（PDF） - NTE Electronics

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NTE2325

Silicon NPN Transistor High Voltage Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE1

hFE2

VCE(sat)

VBE(sat)

VCE = 5V, IC = 200mA

VCE = 5V, IC = 1A

IC = 1.5A, IB = 300mA

IC = 1.5A, IB = 300mA

10 – –

8––

– – 2.0 V

– – 1.5 V

Current Gain–Bandwidth Product

Output Capactiance

Switching Characteristics

fT

VCE = 10V, IC = 200mA

Cob VCB = 10V, f = 1MHz

– 15 – MHz

– 60 – pF

Turn–On Time

Storage Time

Fall Time

ton

IC = 2A, IB1 = 400mA, IB2 = 800mA,

tstg

RL = 200Ω, VCC = 400V

tf

– 1.0 – µs

– 3.0 – µs

– 0.7 – µs

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.500

(12.7)

Max

.070 (1.78) Max

Base

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

Collector/Tab

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