NTE2596 データシートの表示（PDF） - NTE Electronics

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NTE2596

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞

Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 15A, IB1 = –IB2 = 2A,

L = 100µH, Clamped

800 – – V

500 – – V

7––V

500 – – V

Turn–On Time

Storage Time

Fall Time

ton VCC = 200V,

tstg

5IB1 = –2.5IB2 = IC = 26A,

RL = 7.7Ω

tf

– – 0.5 µs

– – 3.0 µs

– – 0.2 µs

.236

(6.0)

.810 (20.57)

Max

.137 (3.5)

Dia Max

.204 (5.2)

1.030

(26.16)

.098

(2.5)

.787

(20.0)

.215 (5.45)

.040 (1.0)

.023 (0.6)

BC E

Note: Collector connected to heat sink

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