NTE2319 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE2319

Silicon NPN Transistor High Voltage, High Speed Power Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 2)

VCEO(sus)

ICEV

ICER

IEBO

Table 2, IC = 100mA, IB = 0

VCEV = 850V,

VBE(off) = 1.5V

TC = +25°C

TC = +100°C

VCE = 850V, RBE = 50Ω, TC = +100°C

VEB = 6V, IC = 0

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

DC Current Gain

Dynamic Characteristics

VCE(sat)

VBE(sat)

hFE

IC = 5A, IB = 700mA

IC = 10A, IB = 1.3A

IC = 10A, IB = 1.3A

IC = 15A, VCE = 5V

TC = +25°C

TC = +100°C

TC = +25°C

TC = +100°C

Output Capacitance

Switching Characteristics

Cob VCB = 10V, IE = 0, ftest = 1kHz

Resistive Load (Table 1)

Delay Time

Rise Time

Storage Time

Fall Time

Storage Time

Fall Time

Inductive Load (Table 2)

td

IC = 10A,

tr

VCC = 250V,

IB1 = 1.3A,

ts

PW = 30νs,

tf

Duty Cycle ≤ 2%

ts

tf

IB2 = 2.6A,

RB = 1.6Ω

VBE(off) = 5V

Storage Time

Fall Time

Crossover Time

Storage Time

Fall Time

Crossover Time

tsv IC = 10A,

tfi

IB1 = 1.3A,

VBE(off) = 5V,

tc

VCE(pk) = 400V

tsv

tfi

tc

TC = +100°C

TC = +150°C

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

450 –

–

V

–

– 0.25 mA

–

– 1.5 mA

–

– 2.5 mA

–

– 1.0 mA

–

– 2.5 V

–

– 3.0 V

–

– 3.0 V

–

– 1.5 V

–

– 1.5 V

5

–

–

–

– 400 pF

– 20 – ns

– 200 – ns

– 1200 – ns

– 200 – ns

– 650 – ns

– 80 – ns

– 800 1800 ns

– 50 200 ns

– 90 250 ns

– 1050 – ns

– 70 – ns

– 120 – ns

Share Link: