NTE2301 データシートの表示（PDF） - NTE Electronics

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NTE2301

Silicon NPN Transistor High Voltage Horizontal Output

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics (Note 1)

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 1)

VCEO(sus) IC = 50mA, IB = 0

ICES VCE = 1500V, VBE = 0

IEBO VBE = 5V, IC = 0

750 –

–

–

–

–

–

V

1 mA

1 mA

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

VCE(sat)

VBE(sat)

IC = 4.5A, IB = 1.8A

IC = 3.5A, IB = 1.5A

IC = 4.5A, IB = 1.8A

IC = 3.5A, IB = 1.5A

–

–

5

V

–

–

5

V

–

– 1.5 V

–

– 1.5 V

Current Gain – Bandwidth Product

Output Capacitance

Switching Characteristics

fT

IC = 100mA, VCE = 5V, ftest = 1MHz –

4

– MHz

Cob VCB = 10V, IE = 0, f = 0.1MHz

– 125 – pF

Fall Time

tf

IC = 4.5A, IB1 = 1.8A, LB = 8µH

IC = 4.5A, IB1 = 1.8A, LB = 8µH,

TC = +100°C

– 0.4 1.0 µs

– 0.6 – µs

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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