NTE2322 データシートの表示（PDF） - NTE Electronics
部品番号
コンポーネント説明
メーカー
NTE2322 Datasheet PDF : 2 Pages
| |||
NTE2322
Silicon PNP Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/°C
Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Reistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 1
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
VEB = 3V, IE = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
40 – – V
60 – – V
5–– V
– – 50 nA
– – 50 nA
75 – –
100 – –
30 – –
– – 0.4 V
– – 1.6 V
– – 1.5 V
– – 2.6 V
Share Link: 