NTE478 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE478

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

NTE Electronics 

NTE478

Silicon NPN Transistor

RF Power Output, PO = 100W @ 175MHz

Description:

The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu-

nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating

conditions, and is internally input matched to optimize power gain and efficiency over the band.

Features:

D Designed for VHF Military and Commercial Equipment

D 100W Min with Greater than 6.0dB Gain

D Withstands Infinite VSWR under Operating Conditions

D Low Intermodulation Distortion (–32dB)

D Diffused Emitter Resistors

Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C/W

Electrical Characteristic: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Static

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

V(BR)CEO IC = 100mA, IB = 0, Note 1

V(BR)CES IC = 100mA, VBE = 0, Note 1

V(BR)EBO IE = 10mA, iC = 0

ICBO VCB = 12V, IE = 0

hFE VCE = 6V, IC = 5A

Min Typ Max Unit

18 –

–

V

36 –

–

V

4

–

–

V

–

– 10 mA

10 –

–

Note 1. Pulsed through 25mH indicator.

Share Link: