NTE355 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE355

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

hFE VCE = 5V, IC = 500mA

15 – –

Dynamic Characteristics

Output Capacitance

Functional Test

Cob VCB = 12.5V, IE = 0, f = 100kHz

– 150 190 pF

Common–Emitter Amplifier Power Gain

Collector Efficiency

GPE POUT = 30W, VCC = 12.5V,

ICmax = 3.4A, f = 175MHz

5.7 –

η

POUT = 30W, VCC = 12.5V, f = 175MHz 60 –

– dB

–%

.250

(6.35)

.225 (5.72)

.725 (18.42)

E

C

.122 (3.1) Dia

(2 Holes)

B

E

.860 (21.84)

.378 (9.56)

.005 (0.15)

.185 (4.7)

.975 (24.77)

.255

(6.5)

.085 (2.14)

Share Link: