NTE162 データシートの表示（PDF） - NTE Electronics

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NTE162

Silicon NPN Transistor TV Vertical Deflection

NTE Electronics 

NTE162

Silicon NPN Transistor

TV Vertical Deflection

Description:

The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters,

converters, regulators, and switching circuits.

Features:

D High Voltage: VCEX = 400V

D Gain Specified to 3.5A

D High Frequency Response to 2.5MHz

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

V(BR)CEO(sus) IC = 100mA, IB = 0, Note 1

ICEX

VCE = 400V, VEB(off) = 1.5V

VCE = 400V, VEB(off) = 1.5V,

TC = +125°C

IEBO

VBE = 5V, IC = 0

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

325 – – V

– – 2.5 mA

– – 1.0 mA

– – 2.0 mA

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