NTE398 データシートの表示（PDF） - NTE Electronics

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NTE398

Silicon PNP Transistor TV Vertical Output (Compl to NTE375)

NTE Electronics 

NTE398

Silicon PNP Transistor

TV Vertical Output

(Compl to NTE375)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pulse Width ≤ 10ms, Duty Cycle ≤ 50%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

ICBO VCB = 150V, IE = 0

– – 50 µA

Emitter Cutoff Current

IEBO VEB = 4V, IC = 0

– – 50 µA

DC Current Gain

hFE VCE = 10V, IC = 400mA, Note 2 60 – 120

Gain Bandwidth Product

fT VCE = 10V, IC = 400mA, Note 2 –

5

– MHz

Collector–Emitter Saturation Voltage VCE(sat) IC = 500A, IB = 50mA

– – 1.0 V

Note 2. Pulse Width ≤ 350µs, Duty Cycle ≤ 25%/Pulsed.

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