NTE181 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE181

Silicon Power Transistor High Power Audio Amplifier

NTE Electronics 

NTE180 (PNP) & NTE181 (NPN)

Silicon Power Transistor

High Power Audio Amplifier

Description:

The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case

designed for use as output devices in complementary audio amplifiers to 100 watts music power per

channel.

Features:

D High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A

D Excellent Safe Operating Area

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W

Electrical Characteristics: (TC =+25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100Ω, Note 1 100 – – V

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1

90 – – V

Collector–Base Cutoff Current

ICBO VCB = 100V, IE = 0

– – 1.0 mA

VCB = 100V, IE = 0, TC = +150°C – – 5.0 mA

Emitter–Base Cutoff Current

IEBO VBE = 4V, IC = 0

– – 1.0 mA

Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.

Share Link: