SMBD2836 データシートの表示（PDF） - Infineon Technologies

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SMBD2836

Silicon Switching Diode Array

Infineon Technologies 

SMBD 2835

SMBD 2836

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 10 mA

IF = 50 mA

IF = 100 mA

Reverse current

VR = 30 V

VR = 50 V

SMBD 2835

SMBD 2836

SMBD 2835

SMBD 2836

AC characteristics

Diode capacitance

VR = 0, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω

measured at IR = 1 mA

Test circuit for reverse recovery time

Symbol

Values

Unit

min. typ. max.

V(BR)

35

–

75

–

VF

–

–

–

–

–

–

IR

–

–

–

–

V

–

–

mV

855

1000

1200

nA

100

100

CD

–

–

4

pF

trr

–

–

6

ns

Pulse generator: tp = 100 ns, D = 0.05

tr = 0.6 ns, Rj = 50 Ω

Oscillograph: R = 50 Ω

tr = 0.35 ns

C ≤ 1 pF

Semiconductor Group

2

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